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InvCMOS_Param.sp
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45 lines (35 loc) · 1.5 KB
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*************CMOS Inverter HSPICE netlist************
.include 'mosistsmc180.lib'
*netlist---------------------------------------
.param SUPPLY=1.8
.param WN=0.36u
.param WP=0.72u
.param LSD=0.36u
*VDD Vdd 0 1.8
VDD Vdd 0 'SUPPLY'
VIN A0 0 PULSE 0 'SUPPLY' 0NS 100PS 100PS 15NS 30NS *input line: square wave, amp. rise t, fall t, on t, period
*Darin Gate Source Bulk Model_Name L=length W=width AS="Area of Source" PS="Perimeter of Source" AD PD
MP1 vdd A0 Vout vdd PMOS L=.18u W='WP' AS='WP*LSD' PS='2*WP+2*LSD' AD='WP*LSD' PD='2*WP+2*LSD'
MN1 Vout A0 0 0 NMOS L=.18u W='WN' AS='WN*LSD' PS='2*WN+2*LSD' AD='WN*LSD' PD='2*WN+2*LSD'
C Vout gnd 10fF
*extra control information---------------------
.options post=2 nomod
.op
*analysis--------------------------------------
.TRAN 10ps 60ns * transient analysis: Step end_time
.measure charge INTEGRAL I(Vdd) FROM=0ns TO=30ns
.measure energy param='-charge * 1.8'
.measure tpdr * rising propagation delay
+ TRIG v(A0) VAL='SUPPLY/2' FALL=1
+ TARG v(Vout) VAL='SUPPLY/2' RISE=1
.measure tpdf * falling propagation delay
+ TRIG v(A0) VAL='SUPPLY/2' RISE=2
+ TARG v(Vout) VAL='SUPPLY/2' FALL=2
.measure tpd param='(tpdr+tpdf)/2' * average propagation delay
.measure trise * rise time
+ TRIG v(Vout) VAL='0.1 * SUPPLY' RISE=1
+ TARG v(Vout) VAL='0.9 * SUPPLY' RISE=1
.measure tfall * fall time
+ TRIG v(Vout) VAL='0.9 * SUPPLY' FALL=2
+ TARG v(Vout) VAL='0.1 * SUPPLY' FALL=2
.END